WebX-SRAM: Enabling in-memory Boolean computations in CMOS static random access memories. A Agrawal, A Jaiswal, C Lee, K Roy. ... A Agrawal, A Jaiswal, D Roy, B Han, G Srinivasan, A Ankit, K Roy. IEEE Transactions on Circuits and Systems I: Regular Papers 66 (8), 3064-3076, 2024. 92: WebJan 22, 2015 · The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.
10 Gb/s optical random access memory (RAM) cell.
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Web2 days ago · SRAM (static RAM), based on the NDR effect, has been shown using various types of heterojunctions and 2D materials (45–48). In this work, we report the design and the experimental demonstration of a new type of negative resistance electro-optic memory device that we refer to as the NDR optical SRAM (NDR-OSRAM). WebDOI: 10.1109/HPEC55821.2024.9926291 Corpus ID: 253252013; Modeling the Energy Efficiency of GEMM using Optical Random Access Memory @article{Zhang2024ModelingTE, title={Modeling the Energy Efficiency of GEMM using Optical Random Access Memory}, author={Bingyi Zhang and Akhilesh R. Jaiswal and Clynn Mathew and Ravi Teja … WebOptical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device components such as cross-coupled micro-ring resonators and photodiodes. Based on the chosen photonic … how to sketch fast